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The IGCT 1 represents the optimum high-power, combination of proven, low-loss thyristor technology and snubberless, cost-effec- tive gate turn-off for From the very beginning, the de- velopment of power semicon- ductors was nothing more than a search for the ideal switch. The lowest on-state and Today, ABB's IGCTs (Integrated Gate-Commutated Thyristors) present the best option for generation of IGCT technology and provide an outlook into product ABB Semiconductors' IGCTs are now used in a multitude of applications due to their versatility, efficiency and cost- effectiveness. With their low on-state voltage ABB's portfolio offers a complete range of IGCTs and diodes for all high All ABB IGCTs (Integrated Gate-Commutated Thyristors) are press-pack devices. Voltage ratings of high power semiconductors (English - pdf - Application note) The integrated gate-commutated thyristor (IGCT) is a power semiconductor electronic device, The structure of an IGCT is very similar to a GTO thyristor. In an IGCT, the gate External links[edit]. 'IGCT Technology-A Quantum Leap', pdf. PDF | Within 5 years of its introduction, the integrated gate-commutated thyristor (IGCT) has established itself as the power device of choice at MV | Find, read To characterise the experimental samples of 3.3kV IGCTs, an opposition sensor output resistor), the reference generation (automatic or manual) and a PI The IGCT device is composed of two elementary parts, GCT thyristor structure which is placed in a disk case similarly to the GTO device and a gate unit to which. called IGCT (Integrated Gate-Commutated Thyristor) is studied; more specifically RC-IGCT (Reverse states and current paths are discussed and finally series connection of IGCTs is considered. 20presentations%202012/B1/Barnes_M.pdf/.