G10n60a pdf

SYMBOL 10N60-A 10N60-B BVDSS IDSS TEST CONDITIONS MIN TYP MAX UNIT µA nA V/°C ns nC. UK2996L-TA3-T : 10 A, 600 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 600 volts OUTER RING OD D inch. 5.906 7.087 4.921 5.512 6.299 7.480 5.118 6.693 7.874 5.512 5.906 7.087 8.465 5.906 6.693 7.874 9.449 6.496 7.087 8.465 10.236 7.087 7.874 9.055 7.480 8.268 9.843 8.268 8.858 10.630 8.661. ATTACHMENT. SVF10N60T/F_Datasheet. 10A, 600V n-channel MOSFET. General description. SVF10N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. DG10N60 is an N-channel enhancement mode MOSFET, which is produced using Dongchen Electronics's proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. FIR10N60FG is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide